P496 – 2″ HV E-Beam deposition Uni Bratislava
Application
HV E-Beam deposition system for thin film and multilayer deposition at 2″ substrates
Year of delivery
2022
Installation site
Unversity of Bratislava, Slovakia
Design Features
- HV E-Beam deposition system in combination with ion beam assisted deposition and thermal evaporation sources.
- One multi pocket e-beam source.
- Motorized pocket exchange for automatic deposition processes.
- Pneumatic source shutter to avoid deposition during material heat up time.
- Thickness controller incl. rate regulation and end point detection.
- Two thermal evaporation sources.
- Use of one power supply for both sources (incl. realais switching of power ouput)
- Pneumatic source shutter to avoid deposition during material heat up time.
- Thickness controller incl. rate regulation and end point detection.
- Sample manipulator with two motorized axes (stage tilt and sample rotation) and maximal sample temperature above 900°C.
- Ion source for sample precleaning, mild etching, plasma treatment and ion beam assisted deposition (IBAD).
- Upstream pressure regulation for sample oxidation / nitration at pressure values up to 0.1mbar.
Special Features
- Two chamber system with sample stage in top chamber and deposition sources in lower chamber to enable
- Fast venting and pump down for sample replacement without load lock chamber.
- Fast venting and pump down for deposition source refilling and cleaning.
- Sample preparation (incl. oxidation / nitration) without influence on deposition source life time.
- Different sample sizes from 2″ wafer down to 10mm x 10mm samples can be handled (using different kind of sample adapters).
Outer Dimensions
Technical specifications and performance values
General
Deposition chamber
Size
460 mm diameter, about 420 mm height
Material
stainless steel
Evaporation chamber
Size
460 mm diameter, about 400 mm height
Material
stainless steel
Vacuum
Deposition chamber
Base pressure
< 10-7 mbar
Pump down time
6 hours to < 2*10-7 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Evaporation chamber
Base pressure
< 10-7 mbar
Pump down time
about 1 hour to < 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Manipulator features
Deposition chamber
Sample size
diameter max. 2″ substrate
Motion axes
2 motorized axes (manipulator tilting and (continous) sample stage rotation)
Temperatures
Room temperature (not stabilized) up to 950°C at sample (short time heating) / > 750°C at sample (long time heating)
Special features
Use of samples with inplane as well as out of plane magnet assamblies is possible
Sample preparation features
Deposition chamber
Plasma treatment
Up to 5E-4 mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion source to sample distance
Wide range variation of ion energy and ion beam current
High pressure neutral gas treatment
Up to 8E-2 mbar neutral oxigen or nitrogen gas (using upstream pressure regulation)
Performance test results
Chamber pump down
Long time sample heating
